Fabricate self-formed nanometer pore array at wafer scale for DNA sequencing

US8986980B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8986980-B2
Application numberUS-201213469220-A
CountryUS
Kind codeB2
Filing dateMay 11, 2012
Priority dateMay 11, 2012
Publication dateMar 24, 2015
Grant dateMar 24, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A technique is provided for a structure. A substrate has a nanopillar vertically positioned on the substrate. A bottom layer is formed beneath the substrate. A top layer is formed on top of the substrate and on top of the nanopillar, and a cover layer covers the top layer and the nanopillar. A window is formed through the bottom layer and formed through the substrate, and the window ends at the top layer. A nanopore is formed through the top layer by removing the cover layer and the nanopillar.

First claim

Opening claim text (preview).

What is claimed is: 1. A structure, comprising: a substrate having a top layer and a bottom layer; a hole formed through the top layer, wherein the hole is coated with a coating to capture a carbon nanotube in the hole, the carbon nanotube being captured to be positioned in the hole; a window formed through the bottom layer and formed through the substrate wherein the window ends at the top layer; a cover layer covers the top layer and the carbon nanotube positioned in the h…

Assignees

Inventors

Classifications

  • Operations & Transport · mapped topic

  • Cross-Sectional Technologies · mapped topic

  • Cross-Sectional Technologies · mapped topic

  • B82Y40/00Primary

    Operations & Transport · mapped topic

  • Cross-Sectional Technologies · mapped topic

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Frequently asked questions

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What does patent US8986980B2 cover?
A technique is provided for a structure. A substrate has a nanopillar vertically positioned on the substrate. A bottom layer is formed beneath the substrate. A top layer is formed on top of the substrate and on top of the nanopillar, and a cover layer covers the top layer and the nanopillar. A window is formed through the bottom layer and formed through the substrate, and the window ends at the…
Who is the assignee on this patent?
Stolovitzky Gustavo A, Wang Deqiang, IBM
What technology area does this patent fall under?
Primary CPC classification B82Y40/00. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).