Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Hybrid photoresist composition and pattern forming method using thereof
US8986918B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8986918-B2 |
| Application number | US-201314081075-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 15, 2013 |
| Priority date | Nov 10, 2011 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
Official abstract text for this publication.
The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a patterned structure on a substrate, comprising: providing a substrate with a material layer; applying a photoresist composition to the substrate to form a photoresist layer on the material layer, the photoresist composition comprising a first photoacid generator having a first activation energy level, a second photoacid generator having a second activation energy level that is different than the first activation energy level, a negati…
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Classifications
- G03F7/004Primary
Physics · mapped topic
Physics · mapped topic
Cross-Sectional Technologies · mapped topic
- G03F7/0382Primary
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8986918B2 cover?
- The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups ar…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification G03F7/004. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).