Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
US8980765B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980765-B2 |
| Application number | US-201213656483-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2012 |
| Priority date | May 2, 2008 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.
Opening claim text (preview).
What is claimed: 1. A system for combinatorial processing of a plurality of discrete regions on a substrate comprising a chamber with a controlled atmosphere, a gas delivery system operable to deliver a first precursor gas to a first discrete region on a substrate, and a plasma generator operable to selectively expose the first discrete region to a plasma; wherein the first precursor gas and the plasma can interact to deposit a first material on the first discrete region, an…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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