Semiconductor device and method for preparing semiconductor device
US-2024339405-A1 · Oct 10, 2024 · US
Methods of forming contact regions using sacrificial layers
US8980737B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980737-B2 |
| Application number | US-201313839161-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2013 |
| Priority date | May 24, 2012 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
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Methods of patterning semiconductor contact materials on a crystalline semiconductor material which allow high-quality interfaces between the crystalline semiconductor material and the patterned semiconductor contact material are provided. Blanket layers of passivation material and sacrificial material are formed on the crystalline semiconductor material. A first contact opening is formed into the blanker layer of sacrificial material. The first contact opening is extended into blanket layer of passivation material, stopping on a first surface portion of the crystalline semiconductor material, using remaining sacrificial material portions as an etch mask. A semiconductor contact material is formed on the exposed first surface portion of the crystalline semiconductor material. In some embodiments, an electrode material portion can be formed over the first contact opening, and then a second blanket layer of sacrificial material can be formed, followed by forming a next contact opening.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor material contact comprising: forming a material stack of, from bottom to top, a blanket layer of passivation material and a blanket layer of sacrificial material on a surface of a crystalline semiconductor material; lithographically patterning the blanket layer of sacrificial material to provide a first contact opening within said blanket layer of sacrificial material; transferring the first contact opening into the bl…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D64/0113Primary
Electricity · mapped topic
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- What does patent US8980737B2 cover?
- Methods of patterning semiconductor contact materials on a crystalline semiconductor material which allow high-quality interfaces between the crystalline semiconductor material and the patterned semiconductor contact material are provided. Blanket layers of passivation material and sacrificial material are formed on the crystalline semiconductor material. A first contact opening is formed into …
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0113. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).