Circuit assembly
US-2024371747-A1 · Nov 7, 2024 · US
Complementary back end of line (BEOL) capacitor
US8980708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980708-B2 |
| Application number | US-201313770127-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2013 |
| Priority date | Feb 19, 2013 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabrication a capacitor comprising: forming a metal oxide metal (MOM) capacitor structure within lower interconnect layers of an interconnect stack of an integrated circuit (IC) device; depositing at least one metal insulator metal (MIM) capacitor layer between a first upper interconnect layer and a second upper interconnect layer of the interconnect stack; and forming a MIM capacitor structure coupled to the MOM capacitor structure, the MIM…
Assignees
Inventors
Classifications
- H10W20/496Primary
Electricity · mapped topic
Electricity · mapped topic
- H10W70/60Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8980708B2 cover?
- A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include …
- Who is the assignee on this patent?
- Qualcomm Inc
- What technology area does this patent fall under?
- Primary CPC classification H10W20/496. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).