Semiconductor gas sensor device and manufacturing method thereof
US-2015377813-A1 · Dec 31, 2015 · US
US8980698B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980698-B2 |
| Application number | US-200913128202-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 10, 2009 |
| Priority date | Nov 10, 2008 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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A method of manufacturing a MEMS device comprises forming a MEMS device element 14 . A sacrificial layer 20 is provided over the device element and a package cover layer 24 is provided over the sacrificial layer. A spacer layer 13 is formed over the sacrificial layer and is etched to define spacer portions adjacent an outer side wall of the sacrificial layer. These improve the hermetic sealing of the side walls of the cover layer 24.
Opening claim text (preview).
The invention claimed is: 1. A method of manufacturing a MEMS device, comprising: forming a MEMS device element including a movable portion, the MEMS device element being at least one of a resonator, a capacitor, and a switch; forming a patterned sacrificial layer over the device element; forming a spacer layer over the sacrificial layer; etching the spacer layer to define a plurality of spacer portions adjacent an outer side wall of the sacrificial layer and remove the spac…
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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