Conductive structure body precursor, conductive structure body and method for manufacturing the same
US-2015370359-A1 · Dec 24, 2015 · US
Methods for fabricating ZnOSe alloys
US8980682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980682-B2 |
| Application number | US-201314133203-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 18, 2013 |
| Priority date | Mar 13, 2013 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
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Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium.
First claim
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We claim: 1. A method of forming a thin film photovoltaic (TFPV) solar cell absorber layer in a combinatorial manner, the method comprising: providing a substrate comprising a plurality of site isolated processing regions, wherein the substrate comprises one of float glass, low-iron glass, borosilicate glass, flexible glass, specialty glass for high temperature processing, stainless steel, carbon steel, aluminum, copper, titanium, molybdenum, polyimide, plastics, and cladded meta…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F77/244Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8980682B2 cover?
- Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to …
- Who is the assignee on this patent?
- Intermolecular Inc, Intermolecular Inc
- What technology area does this patent fall under?
- Primary CPC classification H10F77/244. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).