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Solar cell and method of manufacturing the same
US8980673B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980673-B2 |
| Application number | US-201414168920-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 30, 2014 |
| Priority date | Sep 17, 2009 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
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Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.
First claim
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What is claimed is: 1. A method of manufacturing a solar cell, the method comprising: doping p-type impurities into a silicon substrate to form a p-doped layer; stacking a solar cell device layer containing InGaN on the silicon substrate to form a solar cell device having one or more tandem structure of a lower silicon solar cell device layer comprising the p-doped layer and an upper GaN solar cell comprising a GaN solar cell device layer; stacking a protection layer on the so…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10F77/124Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8980673B2 cover?
- Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacri…
- Who is the assignee on this patent?
- Lg Siltron Inc, Lg Siltron Inc, Korea Advanced Inst Sci & Tech
- What technology area does this patent fall under?
- Primary CPC classification H10F77/124. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).