Method of manufacturing a light emitting device and thin film forming apparatus

Patent metadata

Field	Value
Publication number	US-8980660-B2
Application number	US-201313748890-A
Country	US
Kind code	B2
Filing date	Jan 24, 2013
Priority date	Dec 28, 2000
Publication date	Mar 17, 2015
Grant date	Mar 17, 2015

Abstract

A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.

First claim

What is claimed is:

1. A method of manufacturing a light emitting device comprising the steps of:
forming a light emitting element including a first electrode over a first side of a substrate, a light emitting layer comprising an organic compound over the first electrode, and a second electrode over the light emitting layer;
applying a bias to the light emitting element;
determining a defect portion of the light emitting element; and
irradiating the defect portion of the light emitting element with a laser to physically separate the defect portion from the light emitting element,
wherein the defect portion is made into an insulator by irradiation of the laser.

2. A method of manufacturing a light emitting device according to claim 1 , wherein the bias is a reverse bias.

3. A method of manufacturing a light emitting device according to claim 1 , wherein the light emitting layer contacts the first electrode, and the second electrode contacts the light emitting layer.

4. A method of manufacturing a light emitting device according to claim 1 , wherein the light emitting layer comprises light emitting layers, hole injecting layers, hole transporting layers, electron transporting layers, and electron injecting layers.

5. A method of manufacturing a light emitting device according to claim 1 , further having at least a thin film transistor.

6. A method of manufacturing a light emitting device according to claim 1 , wherein the bias is applied in a range of 1 to 15 V.

7. A method of manufacturing a light emitting device according to claim 1 , wherein the light emitting device is at least one device selected from the group consisting of a digital still camera, a laptop computer, a mobile computer, a DVD player, a goggle type display, a video camera and a cellular phone.

8. A method of manufacturing a light emitting device according to claim 1 , wherein the defect portion is determined by an emission microscope.

9. A method of determining a defect portion of a light emitting device comprising the steps of:
applying a bias to a light emitting element;
detecting a light occurred by an electric current as a result of applying the bias to the light emitting element by an emission microscope to determine the defect portion of the light emitting element; and
irradiating the defect portion of the light emitting element with a laser,
wherein the light emitting device comprises the light emitting element comprising a first electrode over a first side of a substrate, a light emitting layer comprising an organic compound over the first electrode, and a second electrode over the light emitting layer, and
wherein the defect portion is made into an insulator by irradiation of the laser.

10. A method of determining a defect portion of a light emitting device according to claim 9 , wherein the bias is a reverse bias.

11. A method of determining a defect portion of a light emitting device according to claim 9 , wherein the defect portion is physically separate from the light emitting element by irradiation of the laser.

12. A method of determining a defect portion of a light emitting device according to claim 9 , wherein the light emitting layer contacts the first electrode, and the second electrode contacts the light emitting layer.

13. A method of determining a defect portion of a light emitting device according to claim 9 , wherein the light emitting layer comprises light emitting layers, hole injecting layers, hole transporting layers, electron transporting layers, and electron injecting layers.

14. A method of manufacturing a light emitting device according to claim 9 , further having at least a thin film transistor.

15. A method of determining a defect portion of a light emitting device according to claim 9 , wherein the bias is applied in a range of 1 to 15 V.

16. A method of manufacturing a light emitting device according to claim 9 , wherein the light emitting device is at least one device selected from the group consisting of a digital still camera, a laptop computer, a mobile computer, a DVD player, a goggle type display, a video camera and a cellular phone.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamagata Hirokazu
• Adachi Yoshimi
• Shibata Noriko

Classifications

• Y10T428/31504

  Composite [nonstructural laminate] · CPC title

• H10K71/70

  Testing, e.g. accelerated lifetime tests · CPC title

• H10K85/00 Primary

  Organic materials used in the body or electrodes of devices covered by this subclass · CPC title

• H01L51/0032 Primary

  Electricity · mapped topic

• H01L2251/568

  Electricity · mapped topic