Light-emitting element

Patent metadata

Field	Value
Publication number	US-8980658-B2
Application number	US-201313755846-A
Country	US
Kind code	B2
Filing date	Jan 31, 2013
Priority date	Feb 18, 2008
Publication date	Mar 17, 2015
Grant date	Mar 17, 2015

Abstract

A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

First claim

What is claimed is:

1. A method for manufacturing a light-emitting element, comprising:
depositing a first insulator including quantum dots on a principal surface of a semiconductor substrate;
depositing a second insulator including quantum dots on the first insulator;
introducing a first impurity of a first conduction type into the first insulator;
introducing a second impurity of a second conduction type into the second insulator, wherein the second conduction type is diff…

Assignees

• Yokoyama Shin
• Univ Hiroshima

Inventors

• Yokoyama Shin

Classifications

• H10D62/814

  Electricity · mapped topic

• H10H20/822

  Electricity · mapped topic

• H10H20/812 Primary

  Electricity · mapped topic

• B82Y10/00

  Operations & Transport · mapped topic