EUV mask and method for forming the same
US-9354510-B2 · May 31, 2016 · US
Binary photomask blank and binary photomask making method
US8980503B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980503-B2 |
| Application number | US-201113196952-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 3, 2011 |
| Priority date | Aug 4, 2010 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
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A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm , and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
First claim
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The invention claimed is: 1. A binary photomask blank comprising a transparent substrate and a light-shielding film thereon having an optical density of 2.5 to 3.5, wherein said light-shielding film i) consists of a substrate-side compositionally graded layer disposed contiguous to the transparent substrate, a surface-side compositionally graded layer disposed remote from the transparent substrate, or a substrate-side compositionally graded layer disposed contiguous to the transpa…
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- What does patent US8980503B2 cover?
- A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm , and a N+O content of 25-40 at % at its lower su…
- Who is the assignee on this patent?
- Yoshikawa Hiroki, Inazuki Yukio, Nishikawa Kazuhiro, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G03F1/46. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).