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Flash memory device and method of programming the same
US8976584B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8976584-B2 |
| Application number | US-201313767535-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2013 |
| Priority date | Apr 17, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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Abstract
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A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.
First claim
Opening claim text (preview).
What is claimed is: 1. A flash memory device, comprising: a plurality of memory cells formed in a direction perpendicular to a substrate; a first sub word line connected to first memory cells from among the plurality of memory cells, the first sub word line being formed at a first level and selectable using a first selection line; a second sub word line connected to second memory cells from among the plurality of memory cells, the second sub word line being formed at the first…
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Classifications
Physics · mapped topic
- G11C16/0483Primary
Physics · mapped topic
- G06F12/0246Primary
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8976584B2 cover?
- A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level…
- Who is the assignee on this patent?
- Han Jinman, Lee Ho-Chul, Kim Min-Su, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification G11C16/0483. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).