Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact

Patent metadata

Field	Value
Publication number	US-8976570-B2
Application number	US-201314094532-A
Country	US
Kind code	B2
Filing date	Dec 2, 2013
Priority date	Sep 1, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.

First claim

The invention claimed is:

1. A memory device, comprising:
a storage cell comprising:
a selector;
an “L” shaped storage component; and
an electrode positioned between the selector and the “L” shaped storage component, the electrode electrically coupling the selector and the “L” shaped storage component, the “L” shaped storage component comprising:
an approximately vertical portion;
a lower approximately horizontal leg portion, wherein the lower approximately horizontal leg…

Assignees

• Micron Technology Inc

Inventors

• Pellizzer Fabio
• Tortorelli Innocenzo

Classifications

• G11C13/0004 Primary

  Physics · mapped topic

• G11C13/003

  Physics · mapped topic

• H01L27/2409

  Electricity · mapped topic

• H01L27/2463

  Electricity · mapped topic

• H01L45/141

  Electricity · mapped topic