Semiconductor device and method for manufacturing the same

US8976308B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8976308-B2
Application numberUS-201213539901-A
CountryUS
Kind codeB2
Filing dateJul 2, 2012
Priority dateDec 26, 2005
Publication dateMar 10, 2015
Grant dateMar 10, 2015

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for manufacturing a display device, comprising the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first island-shaped semiconductor film and a second island-shaped semiconductor film over the gate insulating film; forming a first source wiring and a first drain electrode in electrical contact with the first island-shaped semiconductor film, and a second source wiring and a…

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What does patent US8976308B2 cover?
It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor fil…
Who is the assignee on this patent?
Hosoya Kunio, Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification G02F1/1368. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).