Display substrate, display panel, and display apparatus
US-2024411399-A1 · Dec 12, 2024 · US
US8976308B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8976308-B2 |
| Application number | US-201213539901-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 2, 2012 |
| Priority date | Dec 26, 2005 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a display device, comprising the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first island-shaped semiconductor film and a second island-shaped semiconductor film over the gate insulating film; forming a first source wiring and a first drain electrode in electrical contact with the first island-shaped semiconductor film, and a second source wiring and a…
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.