Image sensor device
US-2024038804-A1 · Feb 1, 2024 · US
Solid-state image sensor, method of manufacturing the same and camera
US8976282B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8976282-B2 |
| Application number | US-201314064453-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 28, 2013 |
| Priority date | Nov 12, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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Abstract
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An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state image sensor comprising: a semiconductor layer having a first face and a second face; and a wiring structure arranged on a side of the first face, wherein a plurality of photoelectric converters are arranged in the semiconductor layer, wherein light from an object is incident on the second face, wherein the wiring structure includes: a plurality of reflection portions arranged for at least some of the plurality of photoelectric conver…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8976282B2 cover?
- An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, abs…
- Who is the assignee on this patent?
- Canon Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8067. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).