Semiconductor device and driving method thereof

US8976155B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8976155-B2
Application numberUS-201113037491-A
CountryUS
Kind codeB2
Filing dateMar 1, 2011
Priority dateMar 8, 2010
Publication dateMar 10, 2015
Grant dateMar 10, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor device comprising: a photodiode; a first transistor; a second transistor; a third transistor; and a fourth transistor, wherein a first terminal of the photodiode is directly connected to a first terminal of the second transistor, wherein a second terminal of the second transistor is directly connected to a gate of the first transistor and a first terminal of the third transistor, wherein a first terminal of the first trans…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8976155B2 cover?
A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor i…
Who is the assignee on this patent?
Kurokawa Yoshiyuki, Ikeda Takayuki, Kozuma Munehiro, and 2 more
What technology area does this patent fall under?
Primary CPC classification G01J1/44. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).