Persistence filtering in spd arrays
US-2024406582-A1 · Dec 5, 2024 · US
US8976155B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8976155-B2 |
| Application number | US-201113037491-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 1, 2011 |
| Priority date | Mar 8, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a photodiode; a first transistor; a second transistor; a third transistor; and a fourth transistor, wherein a first terminal of the photodiode is directly connected to a first terminal of the second transistor, wherein a second terminal of the second transistor is directly connected to a gate of the first transistor and a first terminal of the third transistor, wherein a first terminal of the first trans…
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