Semiconductor device and fabrication method thereof
US-12159906-B2 · Dec 3, 2024 · US
Semiconductor device, semiconductor substrate, method for manufacturing device, and method for manufacturing semiconductor substrate
US8975728B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975728-B2 |
| Application number | US-201213612562-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2012 |
| Priority date | Oct 18, 2011 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×10 17 cm −2 or more. Defects penetrating through the defect layer form loops in the second epitaxial layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first epitaxial layer; a second epitaxial layer formed over the first epitaxial layer; and an element formed using the second epitaxial layer, wherein the first epitaxial layer includes: an epitaxially grown layer; and a defect layer that is disposed over the epitaxially grown layer, serves as a surface layer of the first epitaxial layer, and has a defect density of 5×10 17 cm −2 or more, and wherein disloc…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8975728B2 cover?
- A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×10 17 cm −2 or more. Defects penetrating through the defect layer form …
- Who is the assignee on this patent?
- Ikarashi Nobuyuki, Tanaka Masayasu, Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3216. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).