Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Integrated device incorporating low-voltage components and power components, and process for manufacturing such device
US8975723B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975723-B2 |
| Application number | US-83998910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2010 |
| Priority date | Jul 21, 2009 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.
First claim
Opening claim text (preview).
The invention claimed is: 1. Integrated device comprising: a semiconductor body having a depressed first portion and second portions projecting from the first portion; an STI insulation structure, extending on the first portion of the semiconductor body, having a first sidewall with the second portions of the semiconductor body, the first sidewall disposed at a first angle with respect to a plane defined by a top surface of the second portion that is less than ninety degrees, ha…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W10/014Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8975723B2 cover?
- An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first re…
- Who is the assignee on this patent?
- Depetro Riccardo, Manzini Stefano, St Microelectronics Srl
- What technology area does this patent fall under?
- Primary CPC classification H10W10/014. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).