Systems and methods for fabricating cross-pillar superjunction structures for semiconductor power conversion devices
US-2024038836-A1 · Feb 1, 2024 · US
Corner layout for superjunction device
US8975720B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975720-B2 |
| Application number | US-201313923065-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 20, 2013 |
| Priority date | Feb 19, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A superjunction device and methods for layout design and fabrication of a superjunction device are disclosed. A layout of active cell column structures can be configured so that a charge due to first conductivity type dopants balances out charge due to second conductivity type dopants in a doped layer in an active cell region. A layout of end portions of the active cell column structures proximate termination column structures can be configured so that a charge due to the first conductivity type dopants in the end portions and a charge due to the first conductivity type dopants in the termination column structures balances out charge due to the second conductivity type dopants in a portion of the doped layer between the termination column structures and the end portions.
First claim
Opening claim text (preview).
What is claimed is: 1. A termination structure for a semiconductor device, comprising: a channel stop field plate on a surface of a semiconductor material proximate an edge of the semiconductor material, wherein the channel stop field plate includes a metal portion and an isolation portion, wherein the metal portion of the channel stop field plate contacts the semiconductor material without a heavily doped implant region or a body region and thereby forming a Schottky style channel stop, and wherein the channel stop field plate is electrically isolated by the isolation portion from areas of the semiconductor device other than where the Schottky style channel stop is formed. 2. The termination structure of the claim 1 wherein the metal portion of the channel stop field plate contacts a lowly doped portion of the semiconductor material. 3. The termination structure of claim 1 wherein the termination structure is formed on a die containing a semiconductor device, wherein the semiconductor device is a MOSFET. 4. The termination structure of claim 1 wherein the termination structure is formed on a die containing a semiconductor device, wherein the semiconductor device is a superjunction device that includes alternating charge balanced first doped columns of first conductivity type and second doped columns of second conductivity type in an active cell region.
Assignees
Inventors
Classifications
Forming charge compensation regions, e.g. superjunctions · CPC title
- H10D62/111Primary
Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures · CPC title
comprising multiple field plate segments · CPC title
Field plates · CPC title
Electrodes comprising a Schottky barrier to a semiconductor · CPC title
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Frequently asked questions
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- What does patent US8975720B2 cover?
- A superjunction device and methods for layout design and fabrication of a superjunction device are disclosed. A layout of active cell column structures can be configured so that a charge due to first conductivity type dopants balances out charge due to second conductivity type dopants in a doped layer in an active cell region. A layout of end portions of the active cell column structures proxim…
- Who is the assignee on this patent?
- Guan Lingpeng, Bobde Madhur, Alpha & Omega Semiconductor
- What technology area does this patent fall under?
- Primary CPC classification H10D62/111. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).