Semiconductor device, light-emitting device, and electronic device

Patent metadata

Field	Value
Publication number	US-8975709-B2
Application number	US-201213612073-A
Country	US
Kind code	B2
Filing date	Sep 12, 2012
Priority date	Sep 16, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first transistor comprising a first gate and a second gate which overlap with each other with a channel formation region of the first transistor therebetween, wherein the second gate of the first transistor is electrically connected to a potential supply line;
a switch, wherein one of terminals of the switch is electrically connected to one of a source and a drain of the first transistor, and the other of the terminals…

Assignees

• Miyake Hiroyuki
• Semiconductor Energy Lab

Inventors

• Miyake Hiroyuki

Classifications

• G09G3/3275

  Physics · mapped topic

• G09G2300/0852

  Physics · mapped topic

• G09G2320/045

  Physics · mapped topic

• G09G2300/0861

  Physics · mapped topic

• G09G3/3233

  Physics · mapped topic