Semiconductor device

Patent metadata

Field	Value
Publication number	US-8975705-B2
Application number	US-201313893560-A
Country	US
Kind code	B2
Filing date	May 14, 2013
Priority date	May 21, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A semiconductor device includes a first planar silicon layer, first and second pillar-shaped silicon layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped silicon layer and a center of the second pillar-shaped silicon layer.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a first planar silicon layer formed on a substrate;
first and second pillar-shaped silicon layers formed on the first planar silicon layer;
a first gate insulating film formed around the first pillar-shaped silicon layer;
a first gate electrode formed around the first gate insulating film;
a second gate insulating film formed around the second pillar-shaped silicon layer;
a second gate electrode formed arou…

Assignees

• Unisantis Elect Singapore Pte

Inventors

• Masuoka Fujio
• Harada Nozomu
• Nakamura Hiroki

Classifications

• H10D89/10

  Electricity · mapped topic

• H10D86/215

  Electricity · mapped topic

• H10D84/0195

  Electricity · mapped topic

• H10D84/0172

  Electricity · mapped topic

• H10D84/85 Primary

  Electricity · mapped topic