Metal oxide semiconductor devices with multiple drift regions

Patent metadata

Field	Value
Publication number	US-8975693-B2
Application number	US-201213683505-A
Country	US
Kind code	B2
Filing date	Nov 21, 2012
Priority date	Mar 29, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type;
a buried layer of a second conductivity type different from the first conductivity type on the substrate;
an epitaxial layer of the second conductivity type on the buried layer;
a pocket well of the first conductivity type in the epitaxial layer;
a first drift region in the epitaxial layer at least partially overlapping the pocket well;
a second drift region…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Eung-Kyu
• Jang Jae-June
• Chang Hoon
• Kim Min-Hwan
• Bae Sung-Ryoul
• Jang Dong-Eun

Classifications

• H10D30/0281

  Electricity · mapped topic

• H10D62/393

  Electricity · mapped topic

• H10D62/157

  Electricity · mapped topic

• H10D62/127

  Electricity · mapped topic

• H10D62/116

  Electricity · mapped topic