Semiconductor device

Patent metadata

Field	Value
Publication number	US-8975690-B2
Application number	US-201313970047-A
Country	US
Kind code	B2
Filing date	Aug 19, 2013
Priority date	Sep 19, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a first electrode, a second electrode, and a third electrode. The first electrode is provided together with the first region in a first direction, provided together with the third region in a second direction, and has an end portion of the first region side located nearer to the first semiconductor side than a boundary between the second region and the third region. The second electrode is provided between the first electrode and the first region and is in electrical continuity with the fourth region. The third electrode contacts with the fourth region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type;
a second semiconductor region of the first conductivity type provided contact with the first semiconductor region and having an impurity concentration higher than an impurity concentration of the first semiconductor region;
a third semiconductor region of a second conductivity type provided on a side opposite to the first semiconductor region of the second semic…

Assignees

• Toshiba Kk

Inventors

• Kitagawa Mitsuhiko

Classifications

• H10D64/512 Primary

  Electricity · mapped topic

• H10D64/20

  Electricity · mapped topic

• H10D12/481

  Electricity · mapped topic

• H10D12/038

  Electricity · mapped topic

• H10D30/63 Primary

  Electricity · mapped topic