Method of manufacturing a capacitor
US-2019123135-A1 · Apr 25, 2019 · US
US8975682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975682-B2 |
| Application number | US-86125610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2010 |
| Priority date | Jun 18, 2004 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes ( 10 or 30 ) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
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What is claimed is: 1. An integrated circuit comprising: a semiconductor substrate having a trench, the trench comprising sidewalls and a bottom; and at least one capacitor in the trench, the capacitor including first and second metal comprising electrodes, and a dielectric layer located between the first and second electrodes, wherein the first electrode of the capacitor comprises hemispherical grain silicon or hemispherical grain silicon alloy on the sidewalls and bottom of…
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