Integrated circuit comprising a capacitor with HSG metal electrodes

US8975682B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8975682-B2
Application numberUS-86125610-A
CountryUS
Kind codeB2
Filing dateAug 23, 2010
Priority dateJun 18, 2004
Publication dateMar 10, 2015
Grant dateMar 10, 2015

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Abstract

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An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes ( 10 or 30 ) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.

First claim

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What is claimed is: 1. An integrated circuit comprising: a semiconductor substrate having a trench, the trench comprising sidewalls and a bottom; and at least one capacitor in the trench, the capacitor including first and second metal comprising electrodes, and a dielectric layer located between the first and second electrodes, wherein the first electrode of the capacitor comprises hemispherical grain silicon or hemispherical grain silicon alloy on the sidewalls and bottom of…

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What does patent US8975682B2 cover?
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes ( 10 or 30 ) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
Who is the assignee on this patent?
Halimaoui Aomar, El Farhane Rebha, Froment Benoit, and 1 more
What technology area does this patent fall under?
Primary CPC classification H10D1/712. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).