Decoupling capacitor cell, cell-based IC, cell-based IC layout system and method, and portable device

Patent metadata

Field	Value
Publication number	US-8975677-B2
Application number	US-201313848923-A
Country	US
Kind code	B2
Filing date	Mar 22, 2013
Priority date	Mar 23, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is arranged in an unused region not occupied by basic cells in a cell-based IC and is connected to a power wiring and a ground wiring.

First claim

What is claimed is:

1. A decoupling capacitor cell comprising:
a first decoupling capacitor formed by only a pMOS transistor; and
a second decoupling capacitor formed by two metal layers,
wherein the decoupling capacitor cell is arranged in an unused region not occupied by basic cells in a cell-based IC and is connected to a power wiring and a ground wiring.

2. A cell-based IC comprising:
a semiconductor substrate;
a plurality of basic cells which is f…

Assignees

• Kito Yoshiharu
• Rohm Co Ltd

Inventors

• Kito Yoshiharu

Classifications

• H10W20/427

  Electricity · mapped topic

• H01G4/385

  Electricity · mapped topic

• G06F30/392

  Physics · mapped topic

• G06F2119/10

  Physics · mapped topic

• G06F30/398

  Physics · mapped topic