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Microelectromechanical semiconductor component that is sensitive to mechanical stresses, and comprises an ion implantation masking material defining a channel region
US8975671B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975671-B2 |
| Application number | US-201113521141-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 10, 2011 |
| Priority date | Jan 11, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor component for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, the semiconductor component comprising: a semiconductor substrate, in an upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation; and a semiconducting channel region having a defined length and width being formed within the active region; wherein…
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Electricity · mapped topic
Electricity · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US8975671B2 cover?
- A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a co…
- Who is the assignee on this patent?
- Ten Have Arnd, Elmos Semiconductor Ag
- What technology area does this patent fall under?
- Primary CPC classification B81C1/00158. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).