Optoelectronic semiconductor chip
US-2024204138-A1 · Jun 20, 2024 · US
Semiconductor light emitting device including a vertically arranged light transmitting layer and light emitting structure
US8975650B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975650-B2 |
| Application number | US-201213563328-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 31, 2012 |
| Priority date | Nov 23, 2007 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode on a top surface of the light emitting structure; a second electrode having a plurality of layers under a lo…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10H20/835Primary
Electricity · mapped topic
- H01L33/405Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8975650B2 cover?
- A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer…
- Who is the assignee on this patent?
- Lee Sang Youl, Lg Innotek Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/835. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).