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Heterojunction semiconductor device and manufacturing method
US8975640B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975640-B2 |
| Application number | US-201313872391-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 29, 2013 |
| Priority date | Apr 29, 2013 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region, an n-type third semiconductor region, a p-type fourth semiconductor region forming a first rectifying junction with the third semiconductor region, and an n-type seventh semiconductor region adjoining the heterojunction formed between the first semiconductor region and the second semiconductor region. The first rectifying junction forms a rectifying junction of a transistor structure which is in ohmic contact with the seventh semiconductor region. Further, a method for producing such a heterojunction semiconductor device is provided.
First claim
Opening claim text (preview).
What is claimed is: 1. A heterojunction semiconductor device, comprising a semiconductor body comprising: a first semiconductor region comprising aluminum gallium nitride; a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region; an n-type third semiconductor region; a p-type fourth semiconductor region forming a first rectifying junction with the third semiconductor region; and an n-type seventh semiconducto…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/8503Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8975640B2 cover?
- A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second semiconductor region comprising gallium nitride and forming a heterojunction with the first semiconductor region, an n-type third semiconductor region, a p-type fourth semiconductor region forming a first rectif…
- Who is the assignee on this patent?
- Infineon Technologies Austria, Infineon Techonologies Austria AG
- What technology area does this patent fall under?
- Primary CPC classification H10D62/8503. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).