Energy conversion device with selective contacts

Patent metadata

Field	Value
Publication number	US-8975618-B2
Application number	US-201113075366-A
Country	US
Kind code	B2
Filing date	Mar 30, 2011
Priority date	Mar 30, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of E g1 , and a second semiconductor material with an energy difference between valence and conduction bands of E g2 , wherein E g1 and E g2 are different from one another. The device further includes an energy selectively transmissive interface connecting the first and second semiconductor materials.

First claim

What is claimed is:

1. A resonant tunneling device comprising:
a first semiconductor material with an energy difference between valence and conduction bands of Eg 1 ;
a second semiconductor material with an energy difference between valence and conduction bands of Eg 2 , wherein Eg 1 and Eg 2 are different from one another; and
an energy selectively transmissive interface connecting the first and second semiconductor materials,
wherein one of the first or second semiconductor materials comprises an emitter material and the other of the first or second semiconductor materials comprises an acceptor material, and the energy difference between the valence and conduction bands for the emitter material is less than the energy difference between the valence and conduction bands for the acceptor material, and
wherein a thickness of the emitter material is smaller than a hot thermalization length from a region where energy selective extraction takes place.

2. The device according to claim 1 , wherein an electron mass of the acceptor material is greater than an electron mass of the emitter material.

3. The device according to claim 1 , wherein the emitter material absorbs light and generates electrons and holes.

4. The device according to claim 1 , wherein when electrons are a non-majority carrier, a conduction band edge of the emitter material has a lower energy than a conduction band edge of the acceptor material, and when holes are the non-majority carrier, the valence band edge of the emitter material has a higher energy than the valence band edge of the acceptor material.

5. The device according to claim 4 , wherein when electrons are the non-majority carrier the energy selectively transmissive interface provides an energy level that supports resonant tunneling at an electron energy greater than the conduction band edge of the acceptor material, and when holes are the non-majority carrier the energy selectively transmissive interface provides an energy level that supports resonant tunneling at a hole energy less than the valence band edge of the acceptor material.

6. The device according to claim 1 , wherein a non-majority carrier band edge of the acceptor material is substantially aligned to an average non-majority hot carrier energy in the emitter material.

7. The device according to claim 1 , wherein the acceptor material suppresses radiative recombination.

8. The device according to claim 1 , wherein the energy selectively transmissive interface comprises a first barrier layer arranged adjacent to the first semiconductor material, a second barrier layer arranged adjacent to the second semiconductor material, and a quantum well layer arranged between the first and second barrier layers.

9. The device according to claim 1 , wherein a minority carrier effective mass is substantially less than a majority carrier effective mass for the semiconductor material that absorbs light.

10. The device according to claim 1 , wherein a valence and/or conduction band of the first semiconductor material is offset from a respective valence or conduction band of the second semiconductor material.

11. The device according to claim 1 , wherein carriers are electrically extracted from the first and second semiconductor material to an external circuit.

12. The device according to claim 1 , wherein the energy selectively transmissive interface is arranged between the first and second semiconductor materials.

13. The device according to claim 1 , wherein the emitter and acceptor materials are substantially undoped, and the acceptor region is a direct band-gap material having a structure that supports efficient radiative recombination.

14. The device according to claim 13 , wherein the emitter material comprises InAs and the acceptor material is a quaternary material.

15. The device according to claim 1 , wherein an offset between the valance bands of the semiconductor materials is selected to enable direct hole transport without tunneling.

16. The device according to claim 1 , wherein carriers are electrically extracted from the acceptor material.

17. The device according to claim 1 , wherein the first semiconductor material is InAs and the second semiconductor material is InxAl1-xAsySb 1-y.

18. The device according to claim 17 wherein the energy selectively transmissive interface is a quantum well of InAs between two layers of AlSb.

19. The device according to claim 1 , wherein the energy selective transmissive interface comprises a stack of energy selective transmissive interfaces.

Assignees

• Dimmock James Andrew Robert
• Day Stephen
• Kauer Matthias
• Heffernan Jonathan
• Sharp Kk

Inventors

• Dimmock James Andrew Robert
• Day Stephen
• Kauer Matthias
• Heffernan Jonathan

Classifications

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/484

  Refractive light-concentrating means, e.g. lenses · CPC title

• H10F77/146

  Superlattices; Multiple quantum well structures · CPC title

• H10F77/124

  comprising only Group III-V materials, e.g. GaAs · CPC title

• H10F77/45 Primary

  Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements · CPC title