Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material

US8975615B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8975615-B2
Application numberUS-201113291922-A
CountryUS
Kind codeB2
Filing dateNov 8, 2011
Priority dateNov 9, 2010
Publication dateMar 10, 2015
Grant dateMar 10, 2015

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Abstract

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A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

First claim

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What is claimed is: 1. An optical device comprising: a gallium and nitrogen containing substrate having a crystalline surface region and a backside opposite the crystalline surface region; at least one ablated region characterized by a v-shaped profile or a trench-shaped profile on the backside of the gallium and nitrogen containing substrate, where sides and a bottom of the at least one ablated region are gallium rich and have a higher gallium concentration than a surface of th…

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What does patent US8975615B2 cover?
A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
Who is the assignee on this patent?
Felker Andrew, Vickers Nicholas A, Aldaz Rafael, and 6 more
What technology area does this patent fall under?
Primary CPC classification H10H20/819. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).