Article including a body including a fluorescent material and a wavelength shifting fiber, a radiation detector including the article, and a method of using the same
US-2018321418-A1 · Nov 8, 2018 · US
Ion detector
US8975592B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975592-B2 |
| Application number | US-201313744863-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 18, 2013 |
| Priority date | Jan 25, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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An ion detector 1 A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30 a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30 a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.
First claim
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What is claimed is: 1. An ion detector which detects positive ions, the ion detector comprising: a housing which is provided with an ion entrance that allows the positive ions to enter; a conversion dynode which is disposed in the housing and to which a negative potential is applied; and a semiconductor electron detector that is disposed in the housing and provided with an electron incident surface which is opposed to the conversion dynode and into which secondary electrons em…
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- G01T1/28Primary
Physics · mapped topic
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- What does patent US8975592B2 cover?
- An ion detector 1 A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30 a which is opposed to the convers…
- Who is the assignee on this patent?
- Hamamatsu Photonics Kk
- What technology area does this patent fall under?
- Primary CPC classification G01T1/28. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).