Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy

Patent metadata

Field	Value
Publication number	US-8975166-B2
Application number	US-201113302001-A
Country	US
Kind code	B2
Filing date	Nov 22, 2011
Priority date	Nov 22, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films.

First claim

What is claimed:

1. A method for forming a thin film, comprising:
a) exposing a substrate in a first processing environment to atomic hydrogen;
b) moving the substrate to a second processing environment after step a);
c) exposing the substrate to a Group III precursor to form a Group III metal layer in the second processing environment after step b);
d) moving the substrate to a third processing environment after step c);
e) exposing the substrate to a Group V precursor in…

Assignees

• Chua Thai Cheng
• Franklin Timothy Joseph
• Kraus Philip A
• Intermolecular Inc

Inventors

• Chua Thai Cheng
• Franklin Timothy Joseph
• Kraus Philip A

Classifications

• H10P14/24

  Electricity · mapped topic

• H10P14/3416 Primary

  Electricity · mapped topic

• C23C16/45551

  Chemistry & Metallurgy · mapped topic

• C23C16/303

  Chemistry & Metallurgy · mapped topic

• H01L21/0254 Primary

  Electricity · mapped topic