Process for producing at least one deep trench isolation

Patent metadata

Field	Value
Publication number	US-8975154-B2
Application number	US-201213653911-A
Country	US
Kind code	B2
Filing date	Oct 17, 2012
Priority date	Oct 18, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.

First claim

That which is claimed:

1. A method of making at least one deep trench isolation in a semiconductor substrate comprising silicon and having a front side, the method comprising:
forming at least one cavity in the semiconductor substrate from the front side;
conformally depositing dopant atoms on walls of the at least one cavity by forming a layer of doped silicon that does not fill the at least one cavity;
forming, adjacent the walls of the at least one cavity, a doped silicon r…

Assignees

• St Microelectronics Crolles 2
• St Microelectronics Sa

Inventors

• Dutartre Didier
• Aitfqirali-Guerry Zahra
• Campidelli Yves
• Pellissier-Tanon Denis

Classifications

• H10W10/0148 Primary

  Electricity · mapped topic

• H10W10/17 Primary

  Electricity · mapped topic

• H01L21/76237 Primary

  Electricity · mapped topic