Group III-V Device with a Selectively Modified Impurity Concentration
US-2015380497-A1 · Dec 31, 2015 · US
Semiconductor body with a buried material layer and method
US8975151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975151-B2 |
| Application number | US-201314028065-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2013 |
| Priority date | Dec 23, 2009 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one another by semiconductor mesa regions. A first material layer is formed on the bottom of each of the plurality of first trenches such that the first material layer leaves at least one segment of at least one sidewall of each of the plurality of trenches uncovered. Each of the plurality of first trenches is filled by epitaxially growing a semiconductor material from the at least one uncovered sidewall segment. After filling the first trenches, second trenches are formed in the mesa regions.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming a buried material layer in a semiconductor body, the method comprising: providing a semiconductor body having a first side, and having a plurality of first trenches extending from the first surface into the semiconductor body, each of the plurality of first trenches having a bottom and having at least one sidewall, and the plurality of first trenches being separated from one another by semiconductor mesa regions; forming a first materi…
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Electricity · mapped topic
Electricity · mapped topic
- H10P14/2901Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8975151B2 cover?
- One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one an…
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10P14/2901. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).