Method of forming resist pattern

Patent metadata

Field	Value
Publication number	US-8975010-B2
Application number	US-201213718269-A
Country	US
Kind code	B2
Filing date	Dec 18, 2012
Priority date	Dec 21, 2011
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A method of forming a resist pattern including: applying a first resist composition containing a base component that exhibits increased solubility in an alkali developing solution and a photobase generator component that generates a base upon exposure to a substrate to form a first resist film; conducting exposure; conducting baking; conducting an alkali development, thereby forming a negative-tone resist pattern; applying a second resist composition containing a second base component that exhibits increased solubility in an alkali developing solution, an acid generator component that generates acid upon exposure and an organic solvent that does not dissolve the negative-tone resist pattern to the substrate having the negative-tone resist pattern formed thereon to form a second resist film; conducting exposure; and conducting an alkali development, thereby forming a resist pattern.

First claim

What is claimed is:

1. A method of forming a resist pattern comprising:
a step (1) in which a first resist composition comprising a base component (A) that exhibits increased solubility in an alkali developing solution under action of acid, an acidic compound component (G) and a photobase generator component (C) that generates a base upon exposure is applied to a substrate to form a first resist film;
a step (2) in which the first resist film is subjected to exposure;
a step (…

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Takeshita Masaru

Classifications

• G03F7/0035 Primary

  Physics · mapped topic

• G03F7/0045

  Physics · mapped topic

• G03F7/26

  Physics · mapped topic

• G03F7/004

  Physics · mapped topic

• G03F7/0047

  Physics · mapped topic