Underlayer composition and method of manufacturing a semiconductor device
US-2024369932-A1 · Nov 7, 2024 · US
US8975003B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975003-B2 |
| Application number | US-201113989449-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 2, 2011 |
| Priority date | Dec 16, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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The invention provides a photosensitive negative resin composition containing (a) an epoxy-group-containing compound, (b) a first onium salt containing a cation portion structure represented by (b1) and an anion portion structure represented by (b2), and (c) a second onium salt containing a cation portion structure represented by (c1) and an anion portion structure represented by (c2).
Opening claim text (preview).
The invention claimed is: 1. A photosensitive negative resin composition comprising: (a) an epoxy-group-containing compound; (b) a first onium salt containing a cation portion structure represented by (b1) and an anion portion structure represented by (b2); and (c) a second onium salt containing a cation portion structure represented by (c1) and an anion portion structure represented by (c2),…
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