Self-assembled pattern forming method

Patent metadata

Field	Value
Publication number	US-8974682-B2
Application number	US-201313930262-A
Country	US
Kind code	B2
Filing date	Jun 28, 2013
Priority date	Oct 9, 2012
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained.

First claim

What is claimed is:

1. A self-assembled pattern forming method, comprising:
forming on a substrate a guide pattern including a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width L larger than double of the diameter D;
forming a layer of a first polymer on inner walls of the first and second recessed parts, wherein the first polymer is polybutadiene, polymethyl methacrylate, polyethylene, poly-t-butyl methacry…

Assignees

• Toshiba Kk

Inventors

• Hieda Hiroyuki
• Kamata Yoshiyuki
• Kihara Naoko
• Kikitsu Akira
• Yamamoto Ryosuke

Classifications

• G03F7/0002 Primary

  Physics · mapped topic

• G03F7/343 Primary

  Physics · mapped topic