Method of reducing contamination in cvd chamber
US-2015000694-A1 · Jan 1, 2015 · US
Method of reducing contamination in CVD chamber
US8974602B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8974602-B2 |
| Application number | US-201314040739-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2013 |
| Priority date | May 31, 2013 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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The present invention discloses a method of reducing contamination in a CVD chamber. The method comprises cleaning the CVD chamber with first cleaning gases containing NF 3 ; removing the particles in the CVD chamber with second cleaning gases containing N 2 ; further removing the particles in the CVD chamber with third cleaning gases containing O 2 ; and seasoning an amorphous carbon layer with mixed gases containing C 2 H 2 and an inert gas.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of reducing contamination in a CVD chamber, the CVD chamber comprises a wafer heater made of AlN material, the method comprising the steps of: Step S 01 , cleaning the CVD chamber with first cleaning gases containing NF 3 ; wherein the NF 3 is excited into fluorine plasma through ionization, the fluorine plasma reacts with coatings on interior surfaces of the chamber and the heater to generate a fluorine-containing gas, which is exhausted by…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
- C23C16/4405Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
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- What does patent US8974602B2 cover?
- The present invention discloses a method of reducing contamination in a CVD chamber. The method comprises cleaning the CVD chamber with first cleaning gases containing NF 3 ; removing the particles in the CVD chamber with second cleaning gases containing N 2 ; further removing the particles in the CVD chamber with third cleaning gases containing O 2 ; and seasoning an amorphous carbon layer wit…
- Who is the assignee on this patent?
- Shanghai Huali Microelect Corp, Shanghia Huali Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C16/4405. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).