Method of forming semiconductor devices
US-2024387980-A1 · Nov 21, 2024 · US
US8973261B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8973261-B2 |
| Application number | US-201113244562-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 25, 2011 |
| Priority date | Nov 15, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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A manufacturing method of an object having a conductive line includes the following steps. A hardening layer and a conductive line layer are formed in an in-mold roller (IMR) material in sequence. The conductive line layer is formed on a non-conductive substrate by an IMR process. A carrier sheet is then separated to expose the hardening layer. A connecting piece is formed on the hardening layer. The connecting piece runs through the hardening layer by a connection process, and the connecting piece is electrically connected to the conductive line layer. Therefore, an object structure having the conductive line is formed.
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of an object having a conductive line, comprising the steps of: forming a hardening layer and an electrical pad partially exposed by the hardening layer at the same time by an insert molding process; disposing the hardening layer on a carrier sheet; forming a conductive line layer on the hardening layer by an in-mold roller (IMR) process, wherein the conductive line layer contacts the electrical pad, and wherein the carrier sheet…
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