Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
US8973229B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8973229-B2 |
| Application number | US-64575909-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2009 |
| Priority date | Dec 25, 2007 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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A method for manufacturing a composite piezoelectric substrate in which a piezoelectric substrate and a supporting substrate are prepared, ions are implanted in the piezoelectric substrate to form a defective layer at a predetermined depth in the piezoelectric substrate, impurities that are adhered to a surface of the piezoelectric substrate or a surface of the supporting substrate are removed to expose the constituent atoms thereof and to activate the surfaces, the supporting substrate is bonded to the piezoelectric substrate to form a bonded substrate body, the bonded substrate body is separated at the defective layer so that a separation layer between the surface of the piezoelectric substrate and the defective layer is separated from the piezoelectric substrate and bonded to the supporting substrate to form a composite piezoelectric substrate, and the surface of the separation layer of the composite piezoelectric substrate is smoothed.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a composite piezoelectric substrate comprising: a first step of preparing a piezoelectric substrate and a supporting substrate; a second step of implanting ions into a surface of the piezoelectric substrate to form a defective layer in a region at a predetermined depth from the surface of the piezoelectric substrate, the second step being performed such that an amount and an energy of the ions implanted into the surface of the pi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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