Threshold voltage calibration using reference pattern detection

Patent metadata

Field	Value
Publication number	US-8971111-B2
Application number	US-201313900718-A
Country	US
Kind code	B2
Filing date	May 23, 2013
Priority date	May 23, 2013
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A V T offset error differential is calculated. The V T offset error differential is a difference between a number of errors of the predominant type at a first V T offset and a number of errors of the predominant type at a second V T offset. A V T offset is determined using a ratio of the error type differential and the V T offset error differential.

First claim

What is claimed is:

1. A method, comprising:
identifying a predominant type of error of a memory unit of solid state memory cells;
calculating an error type differential, the error type differential comprising a difference between a number of charge loss errors and a number of charge gain errors of the memory unit;
calculating a V T offset error differential, the V T offset error differential comprising a difference between a number of errors of the predominant type at a fir…

Assignees

• Seagate Technology Llc

Inventors

• Ghaly Mai A
• Bowman Rodney Virgil

Classifications

• G06F11/1048

  Physics · mapped topic

• G11C16/3495

  Physics · mapped topic

• G11C11/5628

  Physics · mapped topic

• G11C29/028

  Physics · mapped topic

• G11C16/3404 Primary

  Physics · mapped topic