Emulation of static random access memory (SRAM) by magnetic random access memory (MRAM)

Patent metadata

Field	Value
Publication number	US-8971107-B2
Application number	US-201414281873-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	Oct 18, 2010
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks.

First claim

What is claimed is:

1. A magnetic memory system comprising:
a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command;
a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs, each of the magnetic memory banks being coupled to a respective one of the plurality of FIFOs, at least one FIFO of the plurality of FIFOs being operativ…

Assignees

• Avalanche Technology Inc

Inventors

• Estakhri Petro
• Abedifard Ebrahim
• Jaffin Frederick
• Nemazie Siamack

Classifications

• G11C11/1673 Primary

  Physics · mapped topic

• G11C7/1042

  Physics · mapped topic

• G11C11/1675

  Physics · mapped topic

• G11C11/1653

  Physics · mapped topic

• G11C8/04 Primary

  Physics · mapped topic