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Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization
US8971103B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8971103-B2 |
| Application number | US-201313799587-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2013 |
| Priority date | Mar 13, 2013 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A technique is provided for a thermally assisted magnetoresistive random access memory device. The device has a synthetic antiferromagnetic layer disposed on an antiferromagnetic layer. The synthetic antiferromagnetic layer has a first ferromagnetic storage layer, a non-magnetic coupling layer disposed on the first ferromagnetic storage layer, and a second ferromagnetic storage layer disposed on the non-magnetic coupling layer. A non-magnetic tunnel barrier is disposed on the second ferromagnetic storage layer, and a ferromagnetic sense layer is disposed on the non-magnetic tunnel barrier. A first ferromagnetic critical temperature of the first ferromagnetic storage layer is higher than an antiferromagnetic critical temperature of the antiferromagnetic layer, is higher than a second ferromagnetic critical temperature of the second ferromagnetic storage layer, and is higher than a third ferromagnetic critical temperature of the ferromagnetic sense layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A thermally assisted magnetoresistive random access memory device, comprising: an antiferromagnetic layer; a synthetic antiferromagnetic layer disposed on the antiferromagnetic layer, wherein the synthetic antiferromagnetic layer comprises a first ferromagnetic storage layer, a non-magnetic coupling layer disposed on the first ferromagnetic storage layer, and a second ferromagnetic storage layer disposed on the non-magnetic coupling layer; a non-magnetic…
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Cross-Sectional Technologies · mapped topic
Cross-Sectional Technologies · mapped topic
- G11C11/161Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US8971103B2 cover?
- A technique is provided for a thermally assisted magnetoresistive random access memory device. The device has a synthetic antiferromagnetic layer disposed on an antiferromagnetic layer. The synthetic antiferromagnetic layer has a first ferromagnetic storage layer, a non-magnetic coupling layer disposed on the first ferromagnetic storage layer, and a second ferromagnetic storage layer disposed o…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification G11C11/161. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).