Resonance structure of display device and method of providing the same
US-2024107825-A1 · Mar 28, 2024 · US
Display device and method for manufacturing the same
US8970106B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970106-B2 |
| Application number | US-201213360838-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 30, 2012 |
| Priority date | Sep 19, 2003 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a display device comprising the steps of: forming a hole injection layer by laminating a first conductive layer and a second conductive layer, the hole injection layer being over a first electrode; and forming an electroluminescent layer over the hole injection layer, wherein a silicon or a silicon oxide concentration of the second conductive layer is higher than that of the first conductive layer. 2. The…
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Classifications
Electricity · mapped topic
- H10K59/80517Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8970106B2 cover?
- According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated struc…
- Who is the assignee on this patent?
- Yamazaki Shunpei, Takayama Toru, Sakamoto Naoya, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10K59/80517. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).