Method for fabrication of crack-free ceramic dielectric films
US-2016376708-A1 · Dec 29, 2016 · US
US8970094B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970094-B2 |
| Application number | US-201013514274-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 15, 2010 |
| Priority date | Dec 18, 2009 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A piezoelectric ceramic material has the general formula: P 1-c-d D c Z d (PbO) w where: 0<c≦0.025; 0≦d≦0.05; 0≦w≦0.05; where P stands for a compound having the formula [Pb 1-v Ag I v ][(Zr 1-y Ti y ) 1-u Cu II u ]O 3 , where 0.50≦1−y≦0.60; 0<u≦0.0495; 0≦v≦0.02, and D stands for a component of the general formula [(M 1 O) 1-p (M 2 O) p ] a [Nb 2 O 5 ] 1-a , where M 1 stands for Ba 1-t Sr t , where 0≦t≦1, M 2 stands for Sr and/or Ca, and 0<p<1 and ⅔<a<1 and Z stands for a compound of the general formula: Pb(L 1 R r )O 3 where L is present in the oxidation state II or III, and R is present in the oxidation state VI or V, and: L II is selected from among Fe, Mg, Co, Ni and Cu in combination with R VI =W, where 1=½ and r=½, or L III is selected from among Fe, Cr and Ga in combination with R V =Nb, Ta or Sb, where 1=½ and r=½, or L III is selected from among Fe, Cr and Ga in combination with R VI =W, where 1=⅔ and r=⅓.
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The invention claimed is: 1. A piezoelectric ceramic material of the general formula: P 1-c-d D c Z d (PbO) w where: 0<c≦0.025; 0≦d≦0.05; 0≦w≦0.05; wherein P is a compound of the formula [Pb 1-v Ag I v ][(Zr 1-y Ti y ) 1-u Cu II u ]O 3 , where 0.50≦1−y≦0.60; 0<u≦0.0495; 0≦v≦0.02, and D is a component of the general formula [(M 1 O) 1-p (M 2 O) p ] a [Nb 2 O 5 ] 1-a where M 1 is Ba 1-t Sr t , where 0≦t≦1, M 2 is Sr and/or Ca, and 0<p<1 and ⅔<a<1,…
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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