Electrostatic discharge devices for integrated circuits

US8970004B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8970004-B2
Application numberUS-201213725666-A
CountryUS
Kind codeB2
Filing dateDec 21, 2012
Priority dateDec 21, 2012
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A junction diode array is disclosed for use in protecting integrated circuits from electrostatic discharge. The junction diodes integrate symmetric and asymmetric junction diodes of various sizes and capabilities. Some of the junction diodes are configured to provide low voltage and current discharge via un-encapsulated interconnecting wires, while others are configured to provide high voltage and current discharge via encapsulated interconnecting wires. Junction diode array elements include p-n junction diodes and N+/N++ junction diodes. The junction diodes include implanted regions having customized shapes. If both symmetric and asymmetric diodes are not needed as components of the junction diode array, the array is configured with isolation regions between diodes of either type. Some junction diode arrays include a buried oxide layer to prevent diffusion of dopants into the substrate beyond a selected depth.

First claim

Opening claim text (preview).

The invention claimed is: 1. An electrostatic discharge device for integrated circuits, the electrostatic discharge device comprising: a silicon substrate; a first symmetric junction diode formed in the silicon substrate, the first symmetric junction diode configured to provide low voltage and current discharge via unencapsulated interconnecting wires; a second symmetric junction diode formed in the silicon substrate, the second symmetric junction diode configured to provide h…

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What does patent US8970004B2 cover?
A junction diode array is disclosed for use in protecting integrated circuits from electrostatic discharge. The junction diodes integrate symmetric and asymmetric junction diodes of various sizes and capabilities. Some of the junction diodes are configured to provide low voltage and current discharge via un-encapsulated interconnecting wires, while others are configured to provide high voltage …
Who is the assignee on this patent?
St Microelectronics Inc, IBM
What technology area does this patent fall under?
Primary CPC classification H10D89/611. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).