Integrated circuit with electrostatic discharge protection
US-2024395801-A1 · Nov 28, 2024 · US
US8970004B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970004-B2 |
| Application number | US-201213725666-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2012 |
| Priority date | Dec 21, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A junction diode array is disclosed for use in protecting integrated circuits from electrostatic discharge. The junction diodes integrate symmetric and asymmetric junction diodes of various sizes and capabilities. Some of the junction diodes are configured to provide low voltage and current discharge via un-encapsulated interconnecting wires, while others are configured to provide high voltage and current discharge via encapsulated interconnecting wires. Junction diode array elements include p-n junction diodes and N+/N++ junction diodes. The junction diodes include implanted regions having customized shapes. If both symmetric and asymmetric diodes are not needed as components of the junction diode array, the array is configured with isolation regions between diodes of either type. Some junction diode arrays include a buried oxide layer to prevent diffusion of dopants into the substrate beyond a selected depth.
Opening claim text (preview).
The invention claimed is: 1. An electrostatic discharge device for integrated circuits, the electrostatic discharge device comprising: a silicon substrate; a first symmetric junction diode formed in the silicon substrate, the first symmetric junction diode configured to provide low voltage and current discharge via unencapsulated interconnecting wires; a second symmetric junction diode formed in the silicon substrate, the second symmetric junction diode configured to provide h…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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