Capacitor and semiconductor device including the same
US-2024387608-A1 · Nov 21, 2024 · US
Metal oxide metal capacitor structures
US8970002B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8970002-B2 |
| Application number | US-201213465621-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 7, 2012 |
| Priority date | May 9, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
Official abstract text for this publication.
A metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit including first opposing side walls, second opposing side walls, a cavity with first and second openings, and openings in the first opposing side walls. An inner conducting structure is defined in the plurality of metal layers and the plurality of via layers of the integrated circuit. The inner conducting structure is arranged in the cavity of the outer conducting structure and includes a body, and conducting extensions that extend from the body through the openings in the first opposing side walls. Oxide is arranged between the outer conducting structure and the inner conducting structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A metal oxide metal (MOM) capacitor, the MOM capacitor comprising one or more capacitor cells and further comprising: an outer conducting structure of a single capacitor cell of the one or more capacitor cells, the outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit, the outer conducting structure of the single capacitor cell including a first set of opposing side walls, the first set of o…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D1/692Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8970002B2 cover?
- A metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit including first opposing side walls, second opposing side walls, a cavity with first and second openings, and openings in the first opposing side walls. An inner conducting structure is defined in the plurality of metal layers a…
- Who is the assignee on this patent?
- Sutardja Sehat, Marvell World Trade Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D1/692. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).