Semiconductor device and processes for making same
US-2024290783-A1 · Aug 29, 2024 · US
US8969995B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969995-B2 |
| Application number | US-66705005-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 11, 2005 |
| Priority date | Nov 24, 2004 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an additional semiconductor element, e.g., with magnetoresistors (TMBS) or with pn diodes (TJBS), and have trenches. Such high-efficiency Schottky diodes make it possible to construct rectifiers which are suitable for higher temperatures and can therefore be used in motor vehicle generators, without particular cooling measures such as heat sinks being required.
Opening claim text (preview).
What is claimed is: 1. A high-efficiency Schottky diode device configured as a rectifier for a three-phase generator in a motor vehicle, comprising: a first Schottky diode; and a second semiconductor element monolithically integrated with the first Schottky diode as parts of a semiconductor chip; wherein the semiconductor chip has at least one trench structure, wherein the second semiconductor element includes one of an MOS-structure and a p-n diode, and wherein a conduct…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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