Semiconductor device and processes for making same
US-2024290783-A1 · Aug 29, 2024 · US
Wide gap semiconductor device and method for manufacturing same
US8969993B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969993-B2 |
| Application number | US-201313950698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 25, 2013 |
| Priority date | Sep 6, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A wide gap semiconductor device includes a substrate and a Schottky electrode. The substrate formed of a wide gap semiconductor material has a main face, and includes a first-conductivity-type region and a second-conductivity-type region. The Schottky electrode is arranged adjoining the main face of the substrate. At the substrate, there is foamed a trench having a side face continuous with the main face and a bottom continuous with the side face. The Schottky electrode adjoins the first-conductivity-type region at the side face of the trench and the main face, and adjoins the second-conductivity-type region at the bottom of the trench. The side face of the trench is inclined relative to the main face of the substrate.
First claim
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What is claimed is: 1. A wide gap semiconductor device comprising: a substrate formed of a wide gap semiconductor material, having a main face, and including a first-conductivity-type region and a second-conductivity-type region, and a Schottky electrode arranged adjoining said main face of said substrate, said substrate having a trench formed, said trench including a side face continuous with said main face, and a bottom continuous with said side face, said Schottky electro…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8969993B2 cover?
- A wide gap semiconductor device includes a substrate and a Schottky electrode. The substrate formed of a wide gap semiconductor material has a main face, and includes a first-conductivity-type region and a second-conductivity-type region. The Schottky electrode is arranged adjoining the main face of the substrate. At the substrate, there is foamed a trench having a side face continuous with the…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10D8/051. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).