Photodetection device and electronic device
US-2024355853-A1 · Oct 24, 2024 · US
Solid-state imaging device
US8969987B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969987-B2 |
| Application number | US-201113067918-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 7, 2011 |
| Priority date | Oct 23, 2006 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device, comprising: a light-receiving portion formed in a surface of a semiconductor substrate, the light-receiving portion being configured to carry out a photoelectric conversion; and an optical filter layer formed above the surface of the semiconductor substrate, the optical filter layer including quantum dots embedded in a material layer, wherein the quantum dots have an average diameter and a concentration and the material lay…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F39/182Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969987B2 cover?
- A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed…
- Who is the assignee on this patent?
- Rennie John, Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H10F39/182. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).